- Non-contact measurement
- Fast and reliable quality analysis
- Allows mapping
- Nondestructive analysis
- Quantitative analysis
- High sensitivity
- Semiconductor Process monitoring
- Silicon material diagnostics
- Solar cells
- Radiation detectors, sensors
- Integrated circuits
The method allows quantitative measurement of copper contamination in crystalline silicon wafers. Standard minority carrier lifetime measurements (left map) do not detect even significant copper concentrations while the same tool can be easily upgraded to reveal even minute copper concentrations (right map).
Similar to iron, monitoring of copper contamination is crucial for any semiconductor process lines as well as crystal growth and wafering processes. Copper contamination is known to cause light induced degradation in p-type solar cells, making the method significant also for photovoltaic industry.
Method is tested and verified with various wafer suppliers and semiconductor fabs.
Priority date: 7.10.2005
Dr Antti Haarahiltunen, Prof. Hele Savin, Dr Marko Yli-Koski,
Department of Micro and Nanosciences, School of Electrical Engineering
Phone: +358 50 594 7050